Bulk vapour growth of CdTeGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 65-68, issn 0022-0248Conference Paper

Doping of wide gap II-VI compoundsFASCHINGER, W.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 80-86, issn 0022-0248Conference Paper

Elementary processes in molecular beam epitaxy studied by in-situ scanning electron microscopyINOUE, N.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 334-339, issn 0022-0248Conference Paper

Effect of temperature field on growth stabilityGRASZA, K.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 69-74, issn 0022-0248Conference Paper

Liquid phase electroepitaxial growth of thick and compositionally uniform AlGaAs layers on GaAs substratesZYTKIEWICZ, Z. R.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 283-286, issn 0022-0248Conference Paper

Metalorganic vapor phase epitaxy of wide-gap II-VI semiconductors for optoelectronic applications : current status and future trendsHEUKEN, M.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 570-579, issn 0022-0248Conference Paper

Defect control during growth of highly mismatched (100) InAs/GaAs-heterostructuresTRAMPERT, A; TOURNIE, E; PLOOG, K. H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 368-373, issn 0022-0248Conference Paper

Growth and characterization of two-dimensional GaP on Si by metalorganic chemical vapor depositionSOGA, T; JIMBO, T; UMENO, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 554-557, issn 0022-0248Conference Paper

A multigrid solver for fluid flow and mass transfer coupled with grey-body surface radiation for the numerical simulation of chemical vapor deposition processesDURST, F; KADINSKI, L; SCHÄFER, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 202-208, issn 0022-0248Conference Paper

Hard heteroepitaxy of molecular beam epitaxial grown PbTe on off oriented GaAs(100) substratesSADOWSKI, J; HERMAN, M. A.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 449-454, issn 0022-0248Conference Paper

Inter-surface diffusion of In on (111) A-(001) InAs nonplanar substrates in molecular beam epitaxySHEN, X. Q; NISHINAGA, T.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 374-378, issn 0022-0248Conference Paper

Optical methods for measuring iodine vapor during mercuric iodide crystals growth by physical vapor transportNASON, D; BIAO, Y; BURGER, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 23-28, issn 0022-0248Conference Paper

Surface topography of epitaxial Au(111) films deposited on MoS₂NAGASHIMA, S; OTSUKA, I.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 266-270, issn 0022-0248Conference Paper

Three-dimensional model calculation of epitaxial growth by Monte Carlo simulationTAGWERKER, M; PLOTZ, W. M; SITTER, H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 220-226, issn 0022-0248Conference Paper

Three-dimensional towards two-dimensional coherent epitaxy initiated by surfactantsKERN, R; MÜLLER, P.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 193-197, issn 0022-0248Conference Paper

Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InPKNAUER, A; RICHTER, E; WEYERS, M et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 549-553, issn 0022-0248Conference Paper

Growth of Al_xIn_1-xN single crystal films by microwave-excited metalorganic vapor phase epitaxyQIXIN GUO; OGAWA, H; YOSHIDA, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 462-466, issn 0022-0248Conference Paper

In-situ observation of GaAs selective epitaxy on GaAs (111) B substratesALLEGRETTI, F; INOUE, M; NISHINAGA, T et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 354-358, issn 0022-0248Conference Paper

Influence of growth rates on properties on InN thin filmsSATO, Y; SATO, S.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 262-265, issn 0022-0248Conference Paper

A new lattice relaxation mode in InGaAs on GaAsFUJII, T; YAMAZAKI, S.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 489-494, issn 0022-0248Conference Paper

Atomic force microscopy observation of the epitaxial growth of organic moleculesMATSUSHIGE, K; HAMANO, T; HORIUCHI, T et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 641-644, issn 0022-0248Conference Paper

Effects of adsorbates on step coverage in TiN chemical vapor depositionOHSHITA, Y; FUKAGAWA, W; KOBAYASHI, A et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 188-192, issn 0022-0248Conference Paper

Growth of CuInTe₂ polycrystalline thin filmsNADENAU, V; WALTER, T; SCHOCK, H. W et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 251-255, issn 0022-0248Conference Paper

In situ monitoring of the growth process in GaAs atomic layer epitaxy by gravimetric and optical methodsKOUKITU, A; TAKAHASHI, N; SEKI, H et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 467-474, issn 0022-0248Conference Paper

Liquid phase epitaxy and photoluminescence characterization of p-type GaSb layers grown from Bi based meltsGLADKOV, P; MONOVA, E; WEBER, J et al.Journal of crystal growth. 1995, Vol 146, Num 1-4, pp 319-325, issn 0022-0248Conference Paper